Abstract
Thin films of YBa2Cu3O7 formed by ambient temperature deposition and furnace post-annealing have been obtained at annealing temperatures around 750 °C and an oxygen partial pressure of 29 Pa. The zero resistance transition temperature of these smooth films on LaAlO3 was 89 K, and a critical current density in excess of 1 MA cm−2 at 77 K was found by transport measurements.
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