Lower temperature plasma etching of Cu using IR light irradiation

Abstract

The etching of Cu films is achieved at lower temperature (60 °C) with Cl 2 plasma by IR light irradiation. Anisotropic fine Cu patterns are obtained. The etching rate increases with increasing etching pressure and Cl 2 gas flow rate, reaching levels above 1 μ min −1. There is no microloading or after-corrosion. The lower etching temperature and high etching rate result from the IR light enhancement of CuCl 2 desorption.