Low-energy nitrogen-ion doping into GaAs and its optical properties

Abstract

Abstract Nitrogen (N) ions were impinged during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method. Low-temperature photoluminescence measurements showed that incorporated nitrogen ([N] 18 cm −3 ) is optically active with a substrate temperature of 550°C and a N + ion acceleration energy of 100 eV. For higher [N] of ∼2×10 18 cm −3 , N-related emissions can be found after high temperature (650–850°C) annealing. We discuss the annealing effects and also the novel emissions found after annealing at high temperature (750°C) with a [N] of ∼1×10 19 cm −3 .