Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane

Satoru Yoshimura,Satoshi Sugimoto,Masato Kiuchi,Kensuke Murai,Takae Takeuchi

doi:10.1063/1.5116614

Abstract

Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.

Highlights

Films can be effectively deposited using low-energy massselected ion beams.1,2 In this method, the source materials are initially decomposed in an ion source
We have already measured fragment ions produced from various source materials such as hexamethyldigermane30 and tetraethylorthosilicate31 in a Freeman-type ion source with this method, MS-derived fragment ions produced in a Bernas-type ion source have not been measured yet
SiCH5+ was selected from these fragment ions by adjusting the mass selector

Summary

Introduction

Films can be effectively deposited using low-energy massselected ion beams. In this method, the source materials are initially decomposed in an ion source. Films can be effectively deposited using low-energy massselected ion beams.. Films can be effectively deposited using low-energy massselected ion beams.1,2 In this method, the source materials are initially decomposed in an ion source. The resulting fragment ions are extracted and a mass selector is used to select them. The produced low-energy mass-selected fragment ion beams are injected into a substrate to deposit a film. The fragmentation characteristics of the source materials in an ion source must be determined before film deposition can be conducted. There are several types of ion source for producing ion beams.. The characteristics of the ion beams obtained from such sources have been previously investigated.. The fragmentation characteristics of the source materials in the ion sources have not been examined in detail There are several types of ion source for producing ion beams. The characteristics of the ion beams obtained from such sources have been previously investigated. the fragmentation characteristics of the source materials in the ion sources have not been examined in detail

Methods

Results

Conclusion