Abstract
A low energy N2 − ion beam impinged on a α-Al2O3(0001) single crystal surface in the range of fluence 5×1015/cm2−1×1018/cm2 at room temperature. After ion bombardment, chemical bonding on the modified sapphire surface was investigated by x-ray photoelectron spectroscopy. Below a fluence of 1×1015/cm2, only a non-bonded N1s peak at the binding energy 398.7 eV was found, but further irradiation up to 2×1017/cm2 induced Al−O−N bonding at around 403 eV. The occurrence of Al−N bonding was identified at ion fluence higher than 5×1017/cm2 at 396.6 eV. II–VI ZnO thin films were grown on an untreated/ion-beam-induced sapphire surface by pulsed laser deposition (PLD) for the investigation of the modified-substrate effect on photoluminescence. The ZnO films grown on modified sapphire containing Al−O−N bonding only, and both Al−O−N and Al−N bonding showed a significant reduction of the peak related to deep-level defects in photoluminescence. These results are explained in terms of the formation of Al−N−O and Al−O−N layers and relaxation of the interfacial strain between Al2O3 and ZnO.
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