Abstract
Epitaxial growth of three-dimensional SiGe islands on Si(100) has been investigated by low-energy electron microscopy. Contrast mechanisms that allow measuring the evolution in position, size and shape of individual islands during deposition have been identified, and were used to study the epitaxial embedding of faceted SiGe islands in a Si matrix. Deposition of Si onto SiGe islands drives their expansion and causes a change in their shape: the island apex decays and a (100) top facet forms. A physical interpretation of the mechanism producing this shape change is presented. The eventual smoothing of the growth front upon embedding of the islands is promoted by the strain-driven migration of adatoms away from the (100) top facet.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
