Abstract
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and display applications. In this paper, we demonstrate green-emission (512 nm) InGaN quantum dot (QD) LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition. A radiative lifetime of 707 ps for the uniform InGaN self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 K. The screening of the built-in fields in the QDs effectively improves the performance of QD LEDs. These high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A / cm 2 . Our results show that InGaN QDs may be a viable option as the active medium for stable LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
