Abstract
The infrared optical transmission and photosensitivity of doped, compensated, narrow-gap semiconductor material Cd/sub x/Hg/sub 1-x/Te have been studied as functions of temperature under the same experimental conditions in the range from 5 K to 400 K. The strong anomalous changes in the position of the fundamental absorption edge and the maximum and relative photosensitivity of the material in the range 50 K to 65 K are accounted for by collective effects in disordered semiconductors. Potential-contrast scanning electron microscopy has been used to estimate the size of the p-type regions formed in the crystal at liquid nitrogen temperature.
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