Low‐CTE photosensitive polyimide based on semialicyclic poly(amic acid) and photobase generator

Abstract

AbstractA negative‐type photosensitive polyimide (PSPI) based on semialicyclic poly(amic acid) (PAA), poly(trans‐1,4‐cyclohexylenediphenylene amic acid), and {[(4,5‐dimethoxy‐2‐nitrobenzyl)oxy]carbonyl} 2,6‐dimethylpiperidine (DNCDP) as a photobase generator has been developed as a next‐generation buffer coat material. The semialicyclic PAA was synthesized from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride and trans‐1,4‐cyclohexyldiamine in the presence of acetic acid, and the PAA polymerization solution was directly used for PSPI formulation. This PSPI, consisting of PAA (80 wt %) and DNCDP (20 wt %), showed high sensitivity of 70 mJ/cm2 and high contrast of 10.3, when it was exposed to a 365‐nm line (i‐line), postexposure baked at 190 °C for 5 min, and developed with 2.38 wt % tetramethylammonium hydroxide aqueous solution containing 20 wt % isopropanol at 25 °C. A clear negative image of 6‐μm line and space pattern was printed on a film, which was exposed to 500 mJ/cm2 of i‐line by a contact printing mode and fully converted to poly(trans‐1,4‐cyclohexylenebiphenylene imide) pattern upon heating at 250 °C for 1 h. The PSPI film had a low coefficient of thermal expansion of 16 ppm/K compared to typical PIs, such as prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride and 4,4′‐oxydianiline. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1317–1323, 2010