Low-cost micrometer-scale silicon vias (SVs) fabrication by metal-assisted chemical etching (MaCE) and carbon nanotubes (CNTs) filling

Abstract

A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality of filling materials was compared and discussed.