Abstract
Sulfurization with sulfur vapor has been demonstrated to be useful for fabricating sputtered-multilayer MoS2 films with an approximately 4-nm thickness. With this process, sulfur vacancies in the sputtered MoS2 films were remarkably compensated, and MoO3 was simultaneously sulfurized. Eventually, carrier densities of the sulfurized MoS2 films were successfully reduced to 1.8 × 1016 cm−3 and electron mobilities were considerably enhanced to 25.2 cm2/V-s.
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