Abstract
In this paper, a transient voltage suppressor using a diode-activated SiGe heterojunction bipolar transistor (HBT) is proposed. The capacitance, DC current–voltage (I–V) characteristics, and transmission line pulse (TLP) I–V characteristics of this combination device are investigated. An optimization guideline of the combination device is presented, verified by the corresponding simulation results, and a simple and effective method for achieving the target breakdown voltage is demonstrated. By combining the diode and SiGe HBT, the new structure exhibits both a low capacitance and a low breakdown voltage for protection against electrostatic discharge and electrical overstress in discrete or on-chip applications.
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