Abstract
The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSix can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
