Low-voltage wide-locking range LC-tank divide-by-3 injection-locked frequency divider

Abstract

A low-voltage and wide-locking range divide-by-3 injection-locked frequency divider (ILFD) using a standard 90 nm complementary metal-oxide-silicon (CMOS) process is presented. The ÷3 ILFD circuit is realized with an n-core MOS LC-tank oscillator. The bodies of cross-coupled transistors are forward-biased using a rectified dc voltage for low-voltage operation. The core power consumption of the ILFD core is 3.45 mW at the drain-source voltage of 0.4 V. The divider's free-running frequency is tunable from 5.93 to 6.49 GHz and at the incident power of 0 dBm, the maximum locking range is 1.9 GHz (10.52%), from the incident frequency 17.1–19.0 GHz. The operation range is 3.6 GHz (19.04%), from 17.1 to 20.7 GHz.