Abstract
Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting considerable attention over the last two decades as alternatives to a-Si due to their superior electrical performance coupled with optical transparency to visible light and mechanical flexibility. They have become highly desirable for applications in backplane electronics for active-matrix organic light-emitting diodes including flexible displays and other newly emerging areas. Indeed, the performance of oxide-based TFTs, i.e., the carrier mobility, exceeds that of amorphous a-Si-based TFTs, and their stability characteristics exceed those of organic semiconductors.
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