Abstract
Circuit performance of low voltage organic thinfilm transistors (OTFTs) using two different approaches including enlarging the gate dielectric capacitance with large permittivity (high-k) gate dielectric material and reducing the sub-gap density-of-states (DOS) at the channel two different approaches were compared by device and circuit hybrid simulations. The simulation results show that low-voltage OTFTs with reduced sub-gap DOS strategy can help to achieve faster and more power efficient circuits.
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