Abstract
Abstract The Ta2O5 film prepared on silicon by RF sputtering has been used as a gate insulator for the top-contact field-effect transistors fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) or pentacene. Good transistor characteristics have been obtained with saturation at low drive voltages (about −3 V) and with hole mobilities of 5.2 × 10−4 cm2/Vs (MEH-PPV) and 0.8 cm2/Vs (pentacene).
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