Abstract
Fully vacuum-sealed triode-type active-matrix field emission display (AMFED) having an active-matrix cathode on soda-lime glass substrate was designed and fabricated. Each pixel in the active-matrix cathode has the monolithically integrated structure of an amorphous–silicon thin-film transistor (a-Si TFT) and triode-type field emitter array with conical Mo-tips just on the drain of the a-Si TFT. Experimental data indicate that the emission currents of the fabricated active-matrix cathode could be successfully controlled by the a-Si TFT gate voltage. We demonstrated that an emitting image of a moving picture from the fully vacuum-sealed 2-inch AMFEDs could be achieved by switching the low bias-voltage of the a-Si TFT gate to a value below 25 V.
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