Abstract
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
Highlights
The system on chip (SoC) embedded memory market is currently in an era of tremendous growth, which requires the memory are capable of achieving faster operation, smaller cell size, and less power consumption [1– 6]
A batch of HfO2based dielectric stacks have been incorporated into 2D field effect transistor (FeFET), which are targeted to achieve negative capacitance field-effect transistors (NCFET) with steep ON/OFF switching via sub-60 mV/decade slope and hysteresis-free characteristics [21–26], mass experiments based on NC dielectric stack with alternate 2D channel materials have drawn fantastic conclusions, they highlighted the surge requirements to distinguish between NCFETs and FeFETs
We experimentally demonstrated that a counterclockwise memory window (MW) of 0.1 V with sub-60 mV/decade slope has been achieved in HZO MoS2 FeFET, which can be attributed to local carrier density modulation in the 2D channel by fast flipping of ferroelectric dipole
Summary
The system on chip (SoC) embedded memory market is currently in an era of tremendous growth, which requires the memory are capable of achieving faster operation, smaller cell size, and less power consumption [1– 6]. Ferroelectric hafnium oxide, a kind of novel ferroelectric material, has excellent CMOS compatibility and scaling capability, which could serve for the advanced FeFET NVM at sub-5 nm technology node in the 5-10 years [20]. A batch of HfO2based dielectric stacks have been incorporated into 2D FeFETs, which are targeted to achieve negative capacitance field-effect transistors (NCFET) with steep ON/OFF switching via sub-60 mV/decade slope and hysteresis-free characteristics [21–26], mass experiments based on NC dielectric stack with alternate 2D channel materials have drawn fantastic conclusions, they highlighted the surge requirements to distinguish between NCFETs and FeFETs. There is still a lack of systematical investigation regarding the physics and viability of the device technology on one-transistor ferroelectric memory based on MoS2 and ferroelectric HZO
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