Low voltage low power programmable logic gate based on SE-MOSFET

Abstract

Single electron transistor (SET) is one of the most promising devices for nanoscale circuit design. In this paper, new low voltage low power programmable logic gate circuits using SE-MOSFET are presented. Devices that combine singleelectronand metal–oxide–semiconductor (MOS) transistors allows compact realization of basic logic function that exhibit periodic transfer characteristics. The proposed SE-MOSFET logic gates are useful for implementing binary logic circuits. The proposed programmable logic gate is verified by simulating the circuit using PSPICE. The results show that the operation of proposed circuit is in accordance with the theories.