Low-voltage linear transconductor and a memory current using the MIFGMOS Transistor

Abstract

The aim of this article is to probe the advantages that the Multi-Input Floating Gate MOS (MIFGMOS) transistor has versus the conventional MOSFET transistor in order to design analogue circuits with low-voltage operation and good linearity. To show this, the design and implementation of both a voltage to current converter (VIC) cell and a memory current cell (MIC) using MIFGMOS transistors is presented. The development is based on mathematical and simulation analysis as well as experimental results. Both cells present good performance and linearity according to theoretical analysis with a supply voltage of 1.7 V and a power consumption of about 20 μW, despite the long channel technology. These characteristics could be very important in analogue and mixed signal applications requiring low supply voltage and low power consumption. The cells presented here can be part of a sample and hold circuit operating in current mode, but applications are not restricted. Additionally, a comparison between simulation and experimental results obtained when we tested five 3-input MIFGMOS transistors are included to show their properties and behavior.