Abstract
A gradient shadow-mask diffraction method is proposed for the fabrication of junctionless indium-tin-oxide (ITO) and indium-zinc-oxide (IZO) thin-film transistors (TFTs) with different channel thicknesses on one glass substrate during one-batch radio-frequency magnetron sputtering. The operation mode and saturation field-effect mobility of the room-temperature-processed oxide-based junctionless TFTs are channel thickness dependent, and the threshold voltages shift from negative to positive when the self-assembled channel thickness is reduced to a critical thickness.
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