Abstract
A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at −20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at −20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from −120 V to −20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at −300 V.
Highlights
The measurement of the energy spectrum of charged particles plays an important role in studying the fusion reactions of nuclear reactors and in particle physics research conducted at facilities like theLarge Hadron Collider
The thickness of the drift layer (DL) plays an important role in determining the maximum thickness of depletion width (DW), thereby the The maximum that can detected
Though the calculated charge carrier density (CCD) from secondary ionion mass spectrometry (SIMS) was nominally negligible, the calculated (CL) measurements were performed to count the threading dislocation density (TDD), which values from SIMS were in a similar range of CCD measured by Hall measurements
Summary
The development of the sandwich structures of GaN detectors was primarily detectors was primarily limited by the unavailability of free-standing substrates. GaN detectors with thin epitaxial films detect radiation sensors [4,5,6,8]. Researchers increased the DWs of the detector by DWs of the detector by fabricating them on bulk GaN substrates. These detectors generate a 27 μm DW fabricating them on bulk GaN substrates. These detectors generate a 27 μm DW at very high voltages at very high voltages (–550 V) to detect high energies (5.48 MeV) [6]. 5.48 MeV α-particles (241 Am source), even at −20 V
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