Low Voltage High Output Impedance Bulk-Driven Quasi-Floating Gate Self-Biased High-Swing Cascode Current Mirror

Abstract

A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of $${\pm }0.2\,\hbox {V}$$±0.2V. To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to $$250\,{\upmu }\mathrm{A}$$250μA with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as $$240\,\Omega $$240Ω and $$19.5\,\hbox {G}\Omega $$19.5GΩ, respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC $$0.18\,\upmu \mathrm{m}$$0.18μm technology.