Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

Abstract

A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of <;0.2 V at low supply voltage of 2 V. The proposed low-voltage inverter may find potential applications in portable electronics and biosensors.