Abstract
ABSTRACTIn this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.
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