Abstract
Germanium (Ge) bipolar phototransistors with high-responsivity performance are demonstrated using a low-temperature selective Ge epitaxy process. Large photocurrent and optical response enhancement are achieved over a conventional p-i-n Ge photodetector, which is predominantly attributed to the current gain induced by transistor actions. When illuminated with a photon wavelength of 1.55 mum , a Ge phototransistor shows a large responsivity of ~ 2.0 A/W for a low operating bias <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VA</i> of 1.0 V. Optical measurement results further show that good photoresponse could be achieved for a spectral range of 1.31-1.62 mum, making such a device a very promising option for optical detections in the near-infrared (including <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> -band) wavelength regime.
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