Abstract
An Al/ZnSe:Mn/ITO dc-operated electroluminescent (EL) cell was prepared by molecular beam deposition. The threshold voltage was 6–10 V, which is the lowest value in these types of EL cells reported so far. The deposited ZnSe:Mn layer was a polycrystal with only (111) orientation and exhibited sharp x-ray diffraction and reflection high energy electron diffraction patterns which have been hardly obtained by conventional evaporation methods. This low threshold voltage EL cell has a great potential of application in panel displays because of the low cost and the large size of Indium-Tin-Oxide (ITO)-coated glass substrates.
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