Abstract
Double-heterostructure (DH) injection lasers based on the GaAs1−xSbx/AlyGa1−yAs1−xSbx system have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1-μm region. The observed room-temperature threshold current densities, as low as 2100 A cm−2, are comparable to those of GaAs/AlGaAs devices of similar geometry.
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