Abstract
An index-guided GaAs/AlGaAs multiquantum well laser with etched mirrors has been fabricated by molecular beam epitaxy and a dry etching process. The transverse mode is stabilised by a built-in optical waveguide, which is formed on the substrates with a pair of grooves. The etched mirrors are fabricated by reactive ion beam etching. The lasers with 200 μm-long cavities exhibit threshold currents as low as 30 mA and external differential quantum efficiencies as high as 41%.
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