Abstract
Laser diodes emitting at 2.36 µm at room temperature have been fabricated from a type-Il quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 A/cm2 has been obtained for an 820 µm-long-device at 23°C. The characteristic temperature T0 was found to be 55 K between –30 and 50°C, the differential quantum efficiency being 35% for 600 µm long lasers.
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