Abstract
Stripe geometry lasers defined by impurity-induced layer disordering (IILD) have been fabricated utilizing a novel technology of self-aligned Si-Zn diffusion from which both optical and electrical confinements are obtained simultaneously. The fabrication process is considerably simpler than that for the conventional IILD lasers and the parasitic p-n junction area in the laser structures is minimized. Typical lasers with threshold current Ith=5.2 mA and differential quantum efficiency ηd=81% at room-temperature continuous operation as well as highly uniform yield ≳80% have been obtained.
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