Abstract
We have grown homojunction PbTe diode lasers by molecular beam epitaxy with cw threshold current densities as low as 40 A/cm2. The low current tuning rate of 1.2 cm−1/A implies good frequency stability against power supply variations. These diodes also exhibited high-temperature operation (85-K cw, 150-K pulsed), high cw output power (up to 3.5 mW), and a wide cw tuning range (280 cm−1).
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