Abstract
Separate confinement AlInGaAs/InP multiwell laser heterostructures emitting in a wavelength range of 1.2–1.5 μm have been synthesized by metalorganic vapor-phase epitaxy. The threshold current of laser diodes with a strip width of 4.5μm and a cavity length of 200μm was as low as 10 mA. With a cavity length of 1.0 mm, the threshold current density was 500–650 A/cm2. The laser diodes can operate in a continuous regime without forced cooling at an ambient temperature of up to 170°C. In a temperature range from 10 to 80°C, the characteristic temperature parameter T0 reached up to 110 K.
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