Abstract
In this paper, we developed a theoretical formulation to obtain threshold and reflectivity of optical phase conjugate mode (OPCM) in transversely magnetized semiconductors. Expressions are obtained for threshold value of pump intensity and reflectivity (via Brillouin susceptibility) of OPCM under different situations of practical interest, i.e. (i) electrostrictive coupling only, (ii) piezoelectric coupling only, and (iii) electrostrictive and piezoelectric coupling both. Resonance between: (a) stokes frequency and electron-cyclotron frequency, and (b) pump frequency and electron-cyclotron frequency causes a sharp fall in threshold intensity and rise in reflectivity of OPCM. The analysis establishes the importance of semiconductor crystals for obtaining large reflectivity of OPCM by properly selecting material parameters and externally applied transverse magnetic field and hence replaces the old idea of use of high power pulsed lasers. The results suggest that a high reflectivity optical phase conjugate mirror can be fabricated using n-InSb-CO2 system as the outcome of this research work.
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