Abstract
A new method for the theoretical analysis of the thirdorder intermodulation distortion (IM3) in barium strontium titanate (BST) thin film interdigital capacitors (IDCs) on r-plane sapphire substrates is presented. Two circuit topologies - the dual and series dual BST varactor circuit - are proposed and their theoretical models along with simulated and measured results are presented. Low IM3 is demonstrated and experimentally verified. By proper selective biasing, very low nulls are observed in both dual and series dual BST varactor circuit topologies which indicate minimum distortion. The measured first nulls are achieved at ±13V and ±20V for the dual and series dual topologies respectively. These results demonstrate the potential of incorporating these highly linear BST varactors in silicon on sapphire (SoS) applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
