Abstract
Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al0.3Ga0.7As/GaAs/InyGa1-yAs (0.2 ≤ y ≤ 0.3) heterostructures with Si-doped channels. The structures were optimized for thermal stability using a calculation of the self-consistent solution of Schrodinger-Poisson equations and Fermi-Dirac statistics in Hartree approximation. The optimized structure based on a Si-δ-doped 144 A In0.2Ga0.8As quantum well embedded into uniformly doped GaAs channel showed thermal drifts of only 90 ppm·K−1 in current drive mode and 192 ppm K−1 in voltage drive mode. The measurements of the absolute magnetic sensitivity and the low frequency noise were done. The micro-Hall sensor, optimized for thermal drift, is able to resolve the magnetic field of 438 nT.
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