Abstract
One of the limitations in using metal bonding materials for the integration of compound semiconductors and silicon has been controlling the thermal expansion difference. Metal diffusion bonding using copper or gold generally requires annealing temperatures around 400C which is not compatible with heterogeneous materials bonding with large CTE mismatch. However, several processing modifications can be exploited to increase the diffusion rates, reduce annealing temperatures and control stresses in metal diffusion bonded substrates.
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