Abstract
Carbon electrode based perovskite solar cells (PSCs) have attracted more attention owing to low product cost, long term stability and simple fabrication technology. Usually carbon electrode based PSCs are fabricated without hole transport layer, which results in slow development in photovoltaic performance and practical application. In this work, we synthesized p-type semiconductor VOx films via low temperature solution process. And the prepared VOx film was introduced into the carbon electrode based PSCs as hole transport layer, which is highly beneficial to further enhance the power conversion efficiencies. Here, we have demonstrated that solution processed VOx film is suitable to be the hole transport layer for PSCs based on low temperature carbon electrode. With the optimized layers of VOx, carbon electrode based PSCs with VOx exhibit enhanced photovoltaic performance compared with hole transport layer free PSCs. In the meanwhile, carbon electrode based PSCs with VOx hole transport layer have long term stability.
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