Low temperature uniaxial growth of conducting LaNiO3 thin films on glass substrates with RbLaNb2O7 seed layer

Abstract

Conducting LaNiO3 thin films have been fabricated on the borosilicate glass substrates with and without the uniaxial oriented RbLaNb2O7 seed layer by an excimer laser assisted metal organic deposition process with a KrF laser irradiation at 400°C in air. The LaNiO3 thin film prepared on the seed layer had a very high Lotgering factor at F(100)=0.971, indicating highly (100)-oriented growth. The obtained LaNiO3 thin films with and without the seed layer showed low resistivity values, 4.42 and 1.02 mΩ cm at room temperature, respectively. The ρ value of the (100)-oriented LaNiO3 film on the seed layer was comparably lowered to that of the films prepared at high process temperatures reported in the previous reports.