Abstract
The temperature dependence of the resistivity of ferromagnetic GaMnAs films with various Mn compositions and film thicknesses is measured. Resistivity minima are observed at low temperatures for all the GaMnAs samples studied. Below the temperature corresponding to the resistivity minimum, a logarithmic temperature dependence of the resistivity is established. It is independent of the external magnetic fields up to 9 T. These phenomena are explained in terms of the Kondo effect arising from the coexistence of the Mn substitutionals and interstitials in the GaMnAs lattice.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
