Abstract
Gate-all-around n-MOSFETs with Si-nanowire (~7 nm) as the channel body are fabricated and characterized for their low-temperature behavior (~5 K to 295 K). IDS-VGS characteristics at low VDS (~50 mV) exhibit a decrease in current with decreasing temperature in strong inversion up to about ~200 K. However, at high VDS, drain current reverts to typical temperature behavior, i.e., IDS increases with the reducing temperature due to the increase in phonon-limited mobility (muph)- It is inferred that, at low VDS the enhancement in muph at a reduced temperature could be possibly masked by the intersubband scattering on account of subband splitting due to quantum-confinement effects as indicated by subband calculations for nanowire structures.
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