Abstract
Thermoluminescence characteristics of TlInS2 layered single crystals grown by the Bridgman method were investigated in the low temperature range of 10 300 K. The illuminated sample with blue light (≈ 470 nm) at 10 K was heated at constant heating rate. Curve tting, initial rise and various heating rate methods were used to determine the activation energy of the trap levels. All applied methods showed good consistency about the presence of ve trapping centers located at 14, 19, 350, 420, and 520 meV. Behavior of the TL curve for various heating rates was investigated. Traps distribution has also been studied. The activation energies of the distributed trapping centers were found to be increasing from 14 to 46 meV.
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