Low temperature synthesis of Ti3 SiC2 from Ti/SiC/C powders

Abstract

Ternary carbide Ti3 SiC2 was first synthesised through a pulse discharge sintering (PDS) technique from mixtures of Ti, SiC, and C with different molar ratios. Sintering processes were conducted at 1200 – 1400°C for 15 – 60 min at a pressure of 50 MPa. The phase constituents and microstructures of the synthesised samples were analysed by X-ray diffraction (XRD) technique and observed by scanning electron microscopy (SEM). The results showed that, for samples sintered from 3Ti/SiC/C powder at 1200 – 1400°C, TiC is always the main phase and only little Ti3 SiC2 phase is formed. When the molar ratios Ti : SiC : C were adjusted to 3 : 1.1 : 2 and 5 : 2 : 1, the purity of Ti3 SiC2 in the synthesised samples was improved to about 93 wt-%. The optimum sintering temperature for Ti3 SiC2 samples was found to be in the range 1250 – 1300°C and all the synthesised samples contain platelike grains. The relative density of Ti3 SiC2 samples was measured to be higher than 99% at sintering temperatures above 1300⊂C. It is suggested that the PDS technique can rapidly synthesise ternary carbide Ti3 SiC2 with good densification at lower sintering temperature.