Abstract
The effect of reaction temperature on the synthesis of graphitic thin film on nickel substrate was investigated in the range of 400°C to 1,000°C. Amorphous carbon (a-C) film was obtained at 400°C on nickel foils by chemical vapor deposition; hybrid films of multilayer graphene (MLG) and a-C were synthesized at a temperature of 600°C, while MLG was obtained at temperatures in excess of 800°C. Schottky-junction solar cell devices prepared using films produced at 400°C, 600°C, 800°C, and 1,000°C coupled with n-type Si demonstrate power conversion efficiencies of 0.003%, 0.256%, 0.391%, and 0.586%, respectively. A HNO3 treatment has further improved the efficiencies of the corresponding devices to 0.004%, 1.080%, 0.800%, and 0.820%, respectively. These films are promising materials for application in low-cost and simple carbon-based solar cells.
Highlights
Graphene has attracted widespread attention due to its unique band structure and fascinating electronic, optical, chemical, and mechanical properties [1,2,3,4]
An illustration of products synthesized at different temperatures and their typical Raman spectra are shown in Figure 1a,b, respectively
There is a significant difference in the line shape of the 2D-band between samples obtained at low temperature (400°C and 600°C) and high temperature (800°C and 1,000°C)
Summary
Graphene has attracted widespread attention due to its unique band structure and fascinating electronic, optical, chemical, and mechanical properties [1,2,3,4]. Heterojunction solar cells based on carbon materials such as a-C films and graphene have attracted much attention [9]. Their interesting optical properties, chemical inertness, and low cost make a-C films as potential candidate materials for solar cells [10,11]. Carbon films were the earliest carbon materials partially replacing silicon (Si) in Si-based solar cells [9], but their poor electrical conductivity hinders their practical application [12]. In situ graphene/a-C hybrid structure fabrication is highly desirable
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