Abstract
A composition tunable Si1-xGex alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si1-xGex on an insulator. The ALILE allowed Si1-xGex to be large grained (> 50 μm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (≤ 400 °C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si1-xGex layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si1-xGex layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on three-dimensional integrated circuits, glass, and even a plastic substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
