Abstract
Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.
Highlights
Graphene, a sp2-hybridized carbon film with unique properties, has attracted substantial interest in recent years, and it is a candidate for several applications
The plasma emission spectra of the plasma-assisted thermal chemical vapor deposition (CVD) system were obtained to elucidate the mechanism of graphene growth
The C2 dimers in plasma during the plasma-assisted thermal CVD are critical to the formation of various carbon materials [26]
Summary
A sp2-hybridized carbon film with unique properties, has attracted substantial interest in recent years, and it is a candidate for several applications. One of them is the mechanical exfoliation from highly oriented pyrolytic graphite, but it has low throughput and produces graphene with a limited area [4,5,6,7]. Chemical exfoliation is a promising method; it has high throughput and produces graphene flakes from bulk graphite [8]. Sulfuric acid is a common oxidizing agent that reacts strongly with the surface of aromatic carbon compounds to form graphene oxide flakes that are subsequently reduced to graphene [9,10]. This method forms various graphene at low temperature. The plasma emission spectra of the plasma-assisted thermal CVD system were obtained to elucidate the mechanism of graphene growth
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