Abstract
C 60 films on Si(1 1 1) have been grown at low substrate temperature of 100°C by ionized cluster beam deposition technique. Fourier transform infrared (FTIR) transmission spectroscopy, Raman measurements and X-ray diffraction are employed to investigate the structure of deposited films. The results show that the acceleration voltage plays an important role in the growth of the films. As the acceleration voltage is moderate (∼100 V), a pristine C 60 film with face-centered-cubic (fcc) crystal structure can be grown. Further increase of the acceleration voltage leads to the formation of amorphous carbon (a-C) in the grown films. When the acceleration voltage is increased to 600 V, the deposited film has a complete amorphous carbon (a-C) structure.
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