Abstract
Bi 3.25La 0.75Ti 3O 12 (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO 3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. Even at low temperatures ranging from 450°C to 650°C, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (1 1 7) orientation. The BLT thin films annealed as low as 600°C showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to 5×10 9 switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of 600°C, the remanent polarization P r and coercive field were 23.5 μC/cm 2 and 120 kV/cm, respectively.
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