Abstract
We investigated the surface photochemistry of the π-complex type weakly adsorbed ethylene on Si(100)c(4×2) at 50 K, using high-resolution electron energy loss spectroscopy, quadrupole mass spectrometry, and photoelectron spectroscopy. At 50 K, both π-complex precursor and di-σ species coexist. We found that both the photoreaction from the π-complex precursor to the di-σ chemisorption and the photodesorption of ethylene occur upon photoirradiation. From the photodesorption signal of ethylene, we estimated the total cross section including these two photoinduced processes to be 1.1 ×10-17 cm2 at 365 nm. From the electronic structure of the adsorption system obtained in this study, we propose that a temporary negative ion of π-bonded ethylene formed by a photogenerated hot-electron from the Si substrate is related to these processes.
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